Title :
High-current transmission line pulse characterization of aluminum and copper interconnects for advanced CMOS semiconductor technologies
Author :
Voldman, S. ; Gauthier, R. ; Reinhart, D. ; Morrisseau, K.
Author_Institution :
Microelectronics Div., IBM, Essex Junction, VT, USA
fDate :
March 31 1998-April 2 1998
Abstract :
High-current phenomena and electrostatic discharge (ESD) in both aluminum and copper interconnects using transmission line pulse (TLP) testing are reported. Critical current density-to-failure, J/sub crit/, is evaluated as a function of pulse width for both wire and via structures. Experimental results demonstrate that copper-based interconnects have superior ESD robustness compared to aluminum-based interconnects.
Keywords :
CMOS integrated circuits; aluminium; copper; current density; electrostatic discharge; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; Al-SiO/sub 2/-Si; CMOS technology; Cu-SiO/sub 2/-Si; ESD; ESD robustness; Si; aluminum interconnects; copper interconnects; critical current density-to-failure; electrostatic discharge; high-current phenomena; high-current transmission line pulse characterization; pulse width; transmission line pulse testing; via structures; wire structures; Aluminum; CMOS technology; Copper; Delay; Electrostatic discharge; Integrated circuit interconnections; MOSFET circuits; Robustness; Transmission lines; Wiring;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location :
Reno, NV, USA
Print_ISBN :
0-7803-4400-6
DOI :
10.1109/RELPHY.1998.670659
