High-current transmission line pulse characterization of aluminum and copper interconnects for advanced CMOS semiconductor technologies

Author

Voldman, S. ; Gauthier, R. ; Reinhart, D. ; Morrisseau, K.

Author_Institution

Microelectronics Div., IBM, Essex Junction, VT, USA

fYear

1998

fDate

March 31 1998-April 2 1998

Firstpage

293

Lastpage

301

Abstract

High-current phenomena and electrostatic discharge (ESD) in both aluminum and copper interconnects using transmission line pulse (TLP) testing are reported. Critical current density-to-failure, J/sub crit/, is evaluated as a function of pulse width for both wire and via structures. Experimental results demonstrate that copper-based interconnects have superior ESD robustness compared to aluminum-based interconnects.

Keywords

CMOS integrated circuits; aluminium; copper; current density; electrostatic discharge; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; Al-SiO/sub 2/-Si; CMOS technology; Cu-SiO/sub 2/-Si; ESD; ESD robustness; Si; aluminum interconnects; copper interconnects; critical current density-to-failure; electrostatic discharge; high-current phenomena; high-current transmission line pulse characterization; pulse width; transmission line pulse testing; via structures; wire structures; Aluminum; CMOS technology; Copper; Delay; Electrostatic discharge; Integrated circuit interconnections; MOSFET circuits; Robustness; Transmission lines; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International

Conference_Location

Reno, NV, USA

Print_ISBN

0-7803-4400-6

Type

conf

DOI

10.1109/RELPHY.1998.670659

Filename

670659