Title :
MBE growth of GaAs on Si at Thomson
Author :
Charasse, M.N. ; Georgakilas, A. ; Barbier, E. ; Chazelas, J. ; Pocholle, J.P. ; Hirtz, J.P. ; Blanck, H. ; Laviron, M. ; Siejka, J. ; Heral, H. ; Rocher, A.
Author_Institution :
Thomson-CSF-LCR-Domaine de Corbeville, Orsay, France
Abstract :
Three difficulties have been encountered in the growth of high quality GaAs films on Si substrates. Firstly, the epitaxy of a polar material on a nonpolar substrate can lead to antiphase domains. However, it seems to be possible to obtain antiphase-free growths even for double domain Si substrates which have one monolayer steps on their surface. Secondly, the 4% lattice mismatch between GaAs and Si results in a high density of dislocations: 1012 cm-2 at the interface and threading dislocations in the range of 106 cm -2. Thirdly, the different thermal expansion of GaAs and Si leads to a concave curvature of the sample, and microcracks in GaAs when the GaAs thickness is greater than 3 μm. The authors present the work which has been done at Thomson on the growth optimization and the characterization of GaAs and Si grown by MBE, the results on MESFET structures, the integration of MOSFET and MESFET on the same Si substrate and the realization of GaAs optical waveguides on Si
Keywords :
III-V semiconductors; Schottky gate field effect transistors; elemental semiconductors; gallium arsenide; molecular beam epitaxial growth; optical waveguides; semiconductor epitaxial layers; semiconductor growth; silicon; substrates; thermal expansion; GaAs on Si; GaAs optical waveguides on Si; GaAs thin films; GaAs-Si; MBE growth; MESFET structures; Si; Si substrate; Thomson; characterization; concave curvature; different thermal expansion; difficulties; growth of high quality GaAs films; growth optimization; heteroepitaxy; lattice mismatch; semiconductors; threading dislocations;
Conference_Titel :
GaAs on Si, IEE Colloquium on
Conference_Location :
London
