• DocumentCode
    2831628
  • Title

    Electronic structure of Zintl phase compounds of the Y3Au3Sb4 type

  • Author

    Chaput, L. ; Jodin, L. ; Pécheur, P.

  • Author_Institution
    Lab. de Phys. des Materiaux, Ecole des Mines, Nancy, France
  • fYear
    2003
  • fDate
    17-21 Aug. 2003
  • Firstpage
    309
  • Lastpage
    311
  • Abstract
    Using an LMTO-TB method, we have obtained the electronic density of states for some Zintl phase compounds of the Y3Au3Sb4 type containing only s, p and d electrons, such as Zr3Ni3Sb4. These compounds are somewhat similar to to half-Heusler compounds and to the well known 18 s-p-d valence electrons count for filled valence bands in the half-Heusler phases corresponds a 62 s-p-d valence count for the Zintl 3-3-4 phases. All known Zintl phases that do not contain f elements satisfy this rule and are semiconductors. Some calculations have been performed for other (hypothetical) 62 electrons Zintl phases and these are also found semiconductors.
  • Keywords
    antimony compounds; band structure; linear muffin-tin orbital method; nickel compounds; thermoelectricity; tight-binding calculations; valence bands; zirconium compounds; LMTO-TB method; Zintl phase compounds; Zr3Ni3Sb4; electronic density of states; electronic structure; filled valence bands; half-Heusler compounds; Bonding; Electrons; Gold; Hafnium; Phase distortion; Stability; Thermoelectricity; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
  • Print_ISBN
    0-7803-8301-X
  • Type

    conf

  • DOI
    10.1109/ICT.2003.1287511
  • Filename
    1287511