DocumentCode
2831628
Title
Electronic structure of Zintl phase compounds of the Y3Au3Sb4 type
Author
Chaput, L. ; Jodin, L. ; Pécheur, P.
Author_Institution
Lab. de Phys. des Materiaux, Ecole des Mines, Nancy, France
fYear
2003
fDate
17-21 Aug. 2003
Firstpage
309
Lastpage
311
Abstract
Using an LMTO-TB method, we have obtained the electronic density of states for some Zintl phase compounds of the Y3Au3Sb4 type containing only s, p and d electrons, such as Zr3Ni3Sb4. These compounds are somewhat similar to to half-Heusler compounds and to the well known 18 s-p-d valence electrons count for filled valence bands in the half-Heusler phases corresponds a 62 s-p-d valence count for the Zintl 3-3-4 phases. All known Zintl phases that do not contain f elements satisfy this rule and are semiconductors. Some calculations have been performed for other (hypothetical) 62 electrons Zintl phases and these are also found semiconductors.
Keywords
antimony compounds; band structure; linear muffin-tin orbital method; nickel compounds; thermoelectricity; tight-binding calculations; valence bands; zirconium compounds; LMTO-TB method; Zintl phase compounds; Zr3Ni3Sb4; electronic density of states; electronic structure; filled valence bands; half-Heusler compounds; Bonding; Electrons; Gold; Hafnium; Phase distortion; Stability; Thermoelectricity; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
Print_ISBN
0-7803-8301-X
Type
conf
DOI
10.1109/ICT.2003.1287511
Filename
1287511
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