DocumentCode :
2831628
Title :
Electronic structure of Zintl phase compounds of the Y3Au3Sb4 type
Author :
Chaput, L. ; Jodin, L. ; Pécheur, P.
Author_Institution :
Lab. de Phys. des Materiaux, Ecole des Mines, Nancy, France
fYear :
2003
fDate :
17-21 Aug. 2003
Firstpage :
309
Lastpage :
311
Abstract :
Using an LMTO-TB method, we have obtained the electronic density of states for some Zintl phase compounds of the Y3Au3Sb4 type containing only s, p and d electrons, such as Zr3Ni3Sb4. These compounds are somewhat similar to to half-Heusler compounds and to the well known 18 s-p-d valence electrons count for filled valence bands in the half-Heusler phases corresponds a 62 s-p-d valence count for the Zintl 3-3-4 phases. All known Zintl phases that do not contain f elements satisfy this rule and are semiconductors. Some calculations have been performed for other (hypothetical) 62 electrons Zintl phases and these are also found semiconductors.
Keywords :
antimony compounds; band structure; linear muffin-tin orbital method; nickel compounds; thermoelectricity; tight-binding calculations; valence bands; zirconium compounds; LMTO-TB method; Zintl phase compounds; Zr3Ni3Sb4; electronic density of states; electronic structure; filled valence bands; half-Heusler compounds; Bonding; Electrons; Gold; Hafnium; Phase distortion; Stability; Thermoelectricity; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
Print_ISBN :
0-7803-8301-X
Type :
conf
DOI :
10.1109/ICT.2003.1287511
Filename :
1287511
Link To Document :
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