Thermoelectric figure of merit of M-sulphides (M=Fe, Co, Ni, Pd) thin films

Author

Pascual, A. ; Ares, J.R. ; Ferrer, I.J. ; Sánchez, C.R.

Author_Institution

Dept. de Fisica de Materiales, Univ. Autonoma de Madrid, Spain

fYear

2003

fDate

17-21 Aug. 2003

Firstpage

376

Lastpage

379

Abstract

We have grown transition metal (Fe, Co, Ni, Pd) sulphide thin films and we have measured the electrical and transport properties during the formation of the films. Film structure was identified by XRD measurements. The thermoelectric power factor (S²σ) was determined and compared with that of known thermoelectric materials. We have also performed preliminary measurements on these thin films in order to determine the thermoelectric figure of merit (ZT). ZT values of FeS₂ thin films were estimated at different temperatures and compared with those of natural single crystals. Their values were found to be low, but it is expected to get higher ZT values by controlling the film deposition parameters and doping them.

Keywords

X-ray diffraction; cobalt compounds; iron compounds; nickel compounds; palladium compounds; semiconductor thin films; thermal conductivity; thermoelectric power; thermoelectricity; CoS₂; FeS₂; NiS₂; PdS; XRD; electrical properties; thermoelectric figure of merit; thermoelectric power factor; transition metal sulphide thin films; transport properties; Crystalline materials; Crystals; Electric variables measurement; Iron; Performance evaluation; Reactive power; Temperature; Thermoelectricity; Transistors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2003 Twenty-Second International Conference on - ICT

Print_ISBN

0-7803-8301-X

Type

conf

DOI

10.1109/ICT.2003.1287526

Filename

1287526