Title :
Experimental characterization of VDMOSTs for CAD of switching power circuits
Author :
Simas, M. I Castro ; Piedade, M.S. ; Freire, J Costa
Author_Institution :
Dept. of Electr. Eng., Inst. Superior Tecnico, Lisbon, Portugal
Abstract :
Proposes an experimental method for the characterization of power MOS transistors. The method leads to a simplified model that was implemented in the SPICE program. The model represents accurately the switching performance of power MOSFET devices. Since the nonlinearities of the internal capacitances, have an important effect on the commutation behaviour of power MOS transistors, the model emphasizes such effects
Keywords :
circuit CAD; insulated gate field effect transistors; power transistors; switching circuits; SPICE program; characterization; commutation behaviour; internal capacitances; nonlinearities; power MOS transistors; switching performance; switching power circuits;
Conference_Titel :
Large Signal Device Models and Parameter Extractions for Circuit Simulation, IEE Colloquium on
Conference_Location :
London
