DocumentCode
283190
Title
Experimental characterization of VDMOSTs for CAD of switching power circuits
Author
Simas, M. I Castro ; Piedade, M.S. ; Freire, J Costa
Author_Institution
Dept. of Electr. Eng., Inst. Superior Tecnico, Lisbon, Portugal
fYear
1988
fDate
32252
Firstpage
42401
Lastpage
42404
Abstract
Proposes an experimental method for the characterization of power MOS transistors. The method leads to a simplified model that was implemented in the SPICE program. The model represents accurately the switching performance of power MOSFET devices. Since the nonlinearities of the internal capacitances, have an important effect on the commutation behaviour of power MOS transistors, the model emphasizes such effects
Keywords
circuit CAD; insulated gate field effect transistors; power transistors; switching circuits; SPICE program; characterization; commutation behaviour; internal capacitances; nonlinearities; power MOS transistors; switching performance; switching power circuits;
fLanguage
English
Publisher
iet
Conference_Titel
Large Signal Device Models and Parameter Extractions for Circuit Simulation, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
209086
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