DocumentCode
283191
Title
Non-linear MESFET models
Author
Jastrzebski, A.K.
Author_Institution
Electron. Eng. Labs., Kent Univ., Canterbury, UK
fYear
1988
fDate
32252
Firstpage
42430
Lastpage
42435
Abstract
Finds a non-linear circuit model of a MESFET, which is sufficiently accurate for microwave applications and additionally, is easy to implement in general simulation programs. In the first part of the paper, existing non-linear MESFET models are reviewed. The second part contains detailed description of the proposed empirical model, which is a combination and modification of the models discussed in the first part
Keywords
Schottky gate field effect transistors; digital simulation; semiconductor device models; MESFET; empirical model; general simulation programs; microwave applications; nonlinear circuit model;
fLanguage
English
Publisher
iet
Conference_Titel
Large Signal Device Models and Parameter Extractions for Circuit Simulation, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
209087
Link To Document