DocumentCode :
2832111
Title :
Contact effects on silicon surface flashover studies
Author :
Feuerstain, R. ; Senitzky, Benjamin
Author_Institution :
Polytechnic University, Weber Research Institute
fYear :
1989
fDate :
1989
Firstpage :
358
Lastpage :
361
Keywords :
Anodes; Current density; Dielectric constant; Electric breakdown; Electrons; Flashover; Optical switches; Silicon devices; Surface resistance; Vacuum breakdown;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference, 1989. 7th
Type :
conf
DOI :
10.1109/PPC.1989.767497
Filename :
767497
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2832111
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