Nonequilibrium carriers of charge in theory of thermoelectric phenomena

We offer a new approach for description of the thermoelectric phenomena in semiconductor structures. This approach takes into account that carriers of both signs (electrons and holes) contribute in these phenomena in the real circuits. It is shown, that for a correct description of the thermoelectric phenomena in bipolar systems, it is necessary to take into account nonequilibrium carriers even in the linear approximation by the temperature difference AT of heater and cooler. For that, for the first time the inhomogeneous thermal generation and recombination in the presence of the temperature field are considered. The complete set of equations is presented for calculation of thermo-e.m.f. in an arbitrary bipolar semiconductor. Separately the thermo-e.m.f. generation in intrinsic semiconductors is studied.