DocumentCode
2832476
Title
The total dose response of NPN transistors with different package types to various irradiation conditions
Author
Dowling, Stuart
Author_Institution
R. Mil. Coll. of Sci., Cranfield, UK
fYear
1996
fDate
35265
Firstpage
44
Lastpage
48
Abstract
Devices with two different geometries were made from single wafers, in four different packages. The effects of temperature, shielding and dose rate during irradiation were also studied, for total doses of 25 to 200 Gy
Keywords
bipolar transistors; passivation; radiation effects; semiconductor device packaging; shielding; 25 to 200 Gy; NPN transistors; device geometries; dose rate; irradiation conditions; package types; shielding effects; temperature effects; total dose response; Degradation; Educational institutions; Geometry; Manufacturing processes; Noise measurement; Packaging; Passivation; Silicon; Temperature measurement; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 1996., IEEE
Conference_Location
Indian Wells, CA
Print_ISBN
0-7803-3398-5
Type
conf
DOI
10.1109/REDW.1996.574187
Filename
574187
Link To Document