• DocumentCode
    2832534
  • Title

    Numerical analysis of thermoelectric properties of bismuth under magnetic field

  • Author

    Komine, T. ; Ishikawa, Y. ; Suzuki, A. ; Shirai, Hiroshi ; Hasegawa, Y.

  • Author_Institution
    Fac. of Eng., Ibaraki Univ., Japan
  • fYear
    2003
  • fDate
    17-21 Aug. 2003
  • Firstpage
    500
  • Lastpage
    507
  • Abstract
    We study the anisotropic thermoelectric properties of bismuth associated with many-valley bandstructure in magnetic field. In order to obtain the thermoelectric properties of anisotropic materials under a magnetic field, we numerically solved the Boltzmann equation in tensor form. The magnetic field dependences of Seebeck coefficient tensor and conductivity tensor are calculated in various directions of magnetic field. The ratio of effective mass along the longest axis and the shortest axis of each ellipsoid is sensitive for the magnetic field effect of thermoelectric properties. The thermoelectric properties of bismuth under magnetic field are calculated varying relaxation time and Fermi energy, which concern purity of bismuth sample. The lower relaxation time, which corresponds to neutral impurity concentration, makes the optimum strength of magnetic field higher. The higher Fermi energy corresponding to doping impurity causes larger magneto-Seebeck coefficient.
  • Keywords
    Fermi level; Seebeck effect; bismuth; effective mass; electron relaxation time; magnetoelectric effects; many-valley semiconductors; thermoelectricity; Bi; Boltzmann equation; Fermi energy; Seebeck coefficient tensor; anisotropic thermoelectric properties; conductivity tensor; effective mass; longest axis; magnetic field; magnetic field dependences; magneto-Seebeck coefficient; many-valley bandstructure; neutral impurity concentration; numerical analysis; optimum strength; relaxation time; shortest axis; tensor form; Anisotropic magnetoresistance; Bismuth; Boltzmann equation; Conductivity; Impurities; Magnetic fields; Magnetic properties; Numerical analysis; Tensile stress; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
  • Print_ISBN
    0-7803-8301-X
  • Type

    conf

  • DOI
    10.1109/ICT.2003.1287558
  • Filename
    1287558