Title :
Numerical analysis of thermoelectric properties of bismuth under magnetic field
Author :
Komine, T. ; Ishikawa, Y. ; Suzuki, A. ; Shirai, Hiroshi ; Hasegawa, Y.
Author_Institution :
Fac. of Eng., Ibaraki Univ., Japan
Abstract :
We study the anisotropic thermoelectric properties of bismuth associated with many-valley bandstructure in magnetic field. In order to obtain the thermoelectric properties of anisotropic materials under a magnetic field, we numerically solved the Boltzmann equation in tensor form. The magnetic field dependences of Seebeck coefficient tensor and conductivity tensor are calculated in various directions of magnetic field. The ratio of effective mass along the longest axis and the shortest axis of each ellipsoid is sensitive for the magnetic field effect of thermoelectric properties. The thermoelectric properties of bismuth under magnetic field are calculated varying relaxation time and Fermi energy, which concern purity of bismuth sample. The lower relaxation time, which corresponds to neutral impurity concentration, makes the optimum strength of magnetic field higher. The higher Fermi energy corresponding to doping impurity causes larger magneto-Seebeck coefficient.
Keywords :
Fermi level; Seebeck effect; bismuth; effective mass; electron relaxation time; magnetoelectric effects; many-valley semiconductors; thermoelectricity; Bi; Boltzmann equation; Fermi energy; Seebeck coefficient tensor; anisotropic thermoelectric properties; conductivity tensor; effective mass; longest axis; magnetic field; magnetic field dependences; magneto-Seebeck coefficient; many-valley bandstructure; neutral impurity concentration; numerical analysis; optimum strength; relaxation time; shortest axis; tensor form; Anisotropic magnetoresistance; Bismuth; Boltzmann equation; Conductivity; Impurities; Magnetic fields; Magnetic properties; Numerical analysis; Tensile stress; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
Print_ISBN :
0-7803-8301-X
DOI :
10.1109/ICT.2003.1287558