• DocumentCode
    2832552
  • Title

    Total dose radiation hard 0.5 μm SOI CMOS transistors and 256 K SRAMs

  • Author

    Liu, S.T. ; Jenkins, W.C.

  • Author_Institution
    Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
  • fYear
    1996
  • fDate
    35265
  • Firstpage
    62
  • Lastpage
    66
  • Abstract
    The first 2 Mrad(SiO2) total dose hard 0.5 μm CMOS SOI 256 K SRAM fabricated in SIMOX has been demonstrated. The address access time varied from 15 ns at 3.6 V to 19 ns at 3.0 V. The address access time was nearly independent of temperature from -55°C to 125°C and independent of radiation to 2×106 rad(SiO 2) for a given Vdd. The standby current was 0.5 mA at 2×106 rad(SiO2) which was much better than the specified 1.5 mA
  • Keywords
    CMOS memory circuits; MOSFET; SIMOX; SRAM chips; radiation effects; radiation hardening (electronics); -55 to 125 C; 0.5 mA; 0.5 micron; 15 to 19 ns; 256 Kbit; 3 to 3.6 V; SIMOX; SOI CMOS transistors; Si; address access time; static RAM; total dose radiation hard CMOSFETs; total dose radiation hard SRAM; CMOS process; CMOS technology; Doping; Electrons; Hafnium; Isolation technology; MOSFET circuits; Random access memory; Semiconductor device measurement; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 1996., IEEE
  • Conference_Location
    Indian Wells, CA
  • Print_ISBN
    0-7803-3398-5
  • Type

    conf

  • DOI
    10.1109/REDW.1996.574190
  • Filename
    574190
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2832552