Title :
Update of single event failure in power MOSFETs
Author :
Nichols, Donald K. ; Coss, James R. ; Miyahira, Tetsuo ; Titus, Jeffrey ; Oberg, Dennis ; Wert, Jerry ; Majewski, Peter ; Lintz, John
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
This paper presents an update of the first 1994 compendium of single event test data for power MOSFETs. It provides failure thresholds from burnout or gate rupture for 61 devices of six manufacturers
Keywords :
electric breakdown; failure analysis; power MOSFET; radiation effects; semiconductor device reliability; semiconductor device testing; burnout; failure thresholds; gate rupture; power MOSFETs; single event failure; single event test data; Aerospace testing; Cranes; Laboratories; MOSFETs; Manufacturing; Propulsion; Space technology; System testing; Temperature; Threshold voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1996., IEEE
Conference_Location :
Indian Wells, CA
Print_ISBN :
0-7803-3398-5
DOI :
10.1109/REDW.1996.574191
