A 0.5 to 3 GHz monolithic microwave amplifier

A monolithic gallium arsenide amplifier is required for use in the IF stage of a millimetre-wave downconverter. These downconverters will be used in a demonstration of TV distribution at 29 GHz. GaAs MMICs are important in providing the low cost technology demanded by this type of application. The specifications for the IF stage of this downconverter are a frequency range of 0.95 to 1.75 GHz; gain of >40 dB; noise figure of <3 dB; and VSWR of <2:1. In order to meet the gain requirement, two amplifiers will be used in series. It was decided to use a commercial foundry to fabricate the design because of the availability of accurate circuit models. These are derived from the statistical analysis of measurement data on standard components such as FETs, spiral inductors and MIM capacitors. This factor should result in a relatively short design period and a high probability of the first design iteration working. In addition the use of a well established process should result in a high yield. The foundry chosen was Tri-Quint Semiconductor, Beaverton, Oregon, USA