DocumentCode :
2832710
Title :
Realisation of high frequency GaAs switched capacitor filters using insulated gate switches
Author :
Taylor, J.T. ; Luck, J. ; Swanson, J.G. ; Haigh, D.G.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fYear :
1991
fDate :
11-14 Jun 1991
Firstpage :
1661
Abstract :
The design and evaluation of a first-order switched capacitor (SC) filter system using GaAs IGFET switches is described. The use of IGFET switches greatly eases the difficulties encountered in the realization of analog switch circuitry using MESFETs alone. The benefits accruing from this include reduced power consumption and circuit complexity. The system is fabricated on two separate dice mounted in a common package
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; linear integrated circuits; semiconductor switches; switched capacitor filters; GaAs; IGFET switches; analog switch circuitry; circuit complexity; insulated gate switches; power consumption; switched capacitor filters; Capacitors; Complexity theory; Energy consumption; Filters; Frequency; Gallium arsenide; MESFETs; Packaging; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN :
0-7803-0050-5
Type :
conf
DOI :
10.1109/ISCAS.1991.176715
Filename :
176715
Link To Document :
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