Title :
A 15 W, 14-14.5 GHz solid state power amplifier
Author_Institution :
SSPA Microwave Corp., Mississauga, Ont., Canada
Abstract :
With the recent advancement of GaAs MESFET device technology, the power output capability of MESFETs has been increasing steadily. The solid state power amplifiers developed up to the present in C-band to Ku-band frequencies have superior performances and can replace TWT amplifiers in a communication system. SSPA Microwave Corporation 15 watt, 14-14.5 GHz solid state power amplifier which has been developed and manufactured successfully is described
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave amplifiers; microwave integrated circuits; monolithic integrated circuits; 14.0 to 14.5 GHz; 15 W; C-band; GaAs; III-V semiconductors; Ku-band; MESFET device technology; SSPA Microwave Corporation; communication system; power output; solid state power amplifiers;
Conference_Titel :
Microwave Components in Telecommunications, IEE Colloquium on
Conference_Location :
London
