Title :
A 30 GHz low noise amplifier
Author :
Clark, B.W. ; Smith, R.A. ; Andrews, D.P.
Author_Institution :
Plessey Microwave Ltd., Towcester, UK
Abstract :
Describes the development of a low noise GaAs MESFET amplifier for use in the 30 GHz satellite communication band. The aspects covered include the choice of a suitable substrate material and the development of the MESFET through various design aspects to single stage gain module results and overall amplifier performance
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave amplifiers; microwave integrated circuits; monolithic integrated circuits; satellite relay systems; 30 GHz; GaAs; III-V semiconductors; MESFET amplifier; MMIC; amplifier performance; low noise amplifier; quartz; satellite communication band; single stage gain module; substrate material;
Conference_Titel :
Microwave Components in Telecommunications, IEE Colloquium on
Conference_Location :
London
