A charge-conserving silicon-on-sapphire SPICE MOSFET model for analogue design

Author

Howes, R. ; Redman-White, W. ; Nichols, K.G. ; Robinson, M. ; Murray, S. ; Mole, P.

Author_Institution

Dept. of Electron., Southampton Univ., UK

fYear

1991

fDate

11-14 Jun 1991

Firstpage

2160

Abstract

A CAD model for silicon-on-sapphire (SOS) MOSFETs that is suitable for analogue circuit design is presented. The model accounts for drift and diffusion components of channel current and is therefore continuous from subthreshold to strong inversion. The channel current components are specified in terms of the surface potential drain and source, which is calculated without the need for an iterative solution. The kink effect is included in both the drift and diffusion components and predicts the observed increase in subthreshold slope with drain voltage. An equivalent circuit is presented which includes substrate resistance. Implementation of the nine-node model in SPICE2 has been achieved and sample simulation results are presented and compared with device and circuit measurements

Keywords

CAD; electronic engineering computing; equivalent circuits; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; surface potential; CAD model; SOS MOSFET; SPICE2; Si-Al₂O₃; analogue circuit design; channel current components; charge conserving model; diffusion components; drift components; equivalent circuit; kink effect; nine-node model; simulation; substrate resistance; subthreshold slope; surface potential drain; Charge carrier density; Circuit simulation; Circuit synthesis; Electron mobility; Electrostatics; MOSFET circuits; Predictive models; SPICE; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1991., IEEE International Sympoisum on

Print_ISBN

0-7803-0050-5

Type

conf

DOI

10.1109/ISCAS.1991.176717

Filename

176717