Quantum well thermoelectric devices and applications

Author

Ghamaty, S. ; Bass, J.C. ; Elsner, N.B.

Author_Institution

Hi-Z Technol., Inc., San Diego, CA, USA

fYear

2003

fDate

17-21 Aug. 2003

Firstpage

563

Lastpage

566

Abstract

This paper discloses the recent developments of high efficiency quantum well thermoelectrics at Hi-Z Technology, Inc. The performance of the latest P type B₄C/B₉C- N-type Si/SiGe couple will be presented as well as data for the new N-type Si/SiC that will replace Si/SiGe and improve couple efficiency. Preliminary calculations regarding the development of actual quantum well modules will be presented for both power prediction and cooling applications. These modules can be used in future energy conversion system as well as air conditioning system designs. Our current efforts to produce quantum well films more rapidly will be discussed.

Keywords

Ge-Si alloys; boron compounds; elemental semiconductors; p-n heterojunctions; semiconductor quantum wells; silicon; silicon compounds; thermocouples; thermoelectric conversion; thermoelectric devices; wide band gap semiconductors; B₄C-B₉C-Si-SiC; B₄C-B₉C-Si-SiGe; B₄C/B₉C-Si/SiC; B₄C/B₉C-Si/SiGe couple; cooling applications; couple efficiency; power prediction; quantum well modules; quantum well thermoelectric devices; Energy conversion; Germanium silicon alloys; Power generation; Silicon germanium; Space heating; Space technology; Thermal conductivity; Thermoelectric devices; Thermoelectricity; Waste heat;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2003 Twenty-Second International Conference on - ICT

Print_ISBN

0-7803-8301-X

Type

conf

DOI

10.1109/ICT.2003.1287575

Filename

1287575