• DocumentCode
    2833525
  • Title

    Effect of guard ring on sensitivity of the photo-transistor used in an optical mouse

  • Author

    Park, Sangsik ; Uh, Hyungsoo ; Kim, Kyuri

  • Author_Institution
    Dept. of Electron. Eng., Sejong Univ., Seoul, South Korea
  • fYear
    2012
  • fDate
    10-12 July 2012
  • Firstpage
    150
  • Lastpage
    153
  • Abstract
    In the operation of an optical mouse sensor, amplification of signal charge is necessary since low power dissipation and high speed are important. 3 kinds of structure of photo transistor were proposed to get high amplification gain. The performances were verified using 18pixel × 18pixel image sensor. The image sensor was manufactured using 0.18 μm design rule CMOS process. The highest sensitivity was appeared in structure which has no emitter layer on entire surface but has guard ring on boundary of the base. The guard ring maintains base voltage more uniform to get strong bipolar action. This image sensor was mounted in the mouse and showed sampling rate of motion detector up to 50 kH.
  • Keywords
    CMOS image sensors; bipolar integrated circuits; image sensors; optical sensors; photodetectors; phototransistors; CMOS processing; bipolar action; emitter layer; guard ring effect; image sensor; motion detector; optical mouse sensor; phototransistor sensitivity; power dissipation; signal charge amplification gain; size 0.18 mum; Detectors; Image sensors; Light emitting diodes; Mice; Optical imaging; Optical sensors; Transistors; image sensor; mouse; photo generation; photo transistor; sensitivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Digital Information Processing and Communications (ICDIPC), 2012 Second International Conference on
  • Conference_Location
    Klaipeda City
  • Print_ISBN
    978-1-4673-1106-9
  • Type

    conf

  • DOI
    10.1109/ICDIPC.2012.6257272
  • Filename
    6257272