• DocumentCode
    2833572
  • Title

    DC-10 GHz band GaAs MMICs for high-speed optical communication systems

  • Author

    Imai, Yuhki ; Sano, Eiichi ; Asai, Kazuyoshi

  • Author_Institution
    NTT LSI Labs., Atsugi, Japan
  • fYear
    1991
  • fDate
    11-14 Jun 1991
  • Firstpage
    1865
  • Abstract
    Advanced design techniques of GaAs wideband direct-coupled amplifiers are described. The amplifier achieved 20-dB gain with a 3-dB bandwidth of 13 GHz and 5-7 dB noise figure. An equalizing amplifier module consisting of amplifier and variable attenuator MMICs exhibited a high gain of 43 dB over 10-GHz band with a controllable gain of 20-43 dB
  • Keywords
    DC amplifiers; III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; optical communication equipment; wideband amplifiers; 0 to 10 GHz; 13 GHz; 20 to 43 dB; 5 to 7 dB; GaAs; MMICs; bandwidth; design techniques; direct-coupled amplifiers; equalizing amplifier module; gain; high-speed optical communication systems; noise figure; semiconductors; variable attenuator; wideband amplifiers; Bandwidth; Broadband amplifiers; Circuits; FETs; Feedback; Frequency; Gallium arsenide; MMICs; Optical amplifiers; Optical fiber communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1991., IEEE International Sympoisum on
  • Print_ISBN
    0-7803-0050-5
  • Type

    conf

  • DOI
    10.1109/ISCAS.1991.176770
  • Filename
    176770