DocumentCode
2834016
Title
High-speed, high-power switching of semiconductor devices
Author
Okamura, K. ; Watanabe, Y. ; Ohshima, I. ; Yanabu, S.
Author_Institution
Toshiba Corporation
fYear
1989
fDate
1989
Firstpage
836
Lastpage
839
Keywords
Circuit testing; Insulated gate bipolar transistors; Modular construction; Power semiconductor switches; Prototypes; Pulse power systems; Pulse transformers; Semiconductor devices; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 1989. 7th
Type
conf
DOI
10.1109/PPC.1989.767617
Filename
767617
Link To Document