DocumentCode :
2834016
Title :
High-speed, high-power switching of semiconductor devices
Author :
Okamura, K. ; Watanabe, Y. ; Ohshima, I. ; Yanabu, S.
Author_Institution :
Toshiba Corporation
fYear :
1989
fDate :
1989
Firstpage :
836
Lastpage :
839
Keywords :
Circuit testing; Insulated gate bipolar transistors; Modular construction; Power semiconductor switches; Prototypes; Pulse power systems; Pulse transformers; Semiconductor devices; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference, 1989. 7th
Type :
conf
DOI :
10.1109/PPC.1989.767617
Filename :
767617
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2834016
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