Mode-locked and Q-switched 2-µm fibre lasers based on semiconductor saturable absorber technology

Author

Guina, M. ; Kivistö, S. ; Suomalainen, S. ; Okhotnikov, O.

Author_Institution

Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

In this paper, we review recent progress in the development of GaSb-based saturable absorber mirrors used for mode-locking and Q-switching Tm/Ho fibre lasers. The typical semiconductor mirror consists of 18.5 pairs of AlAs_0.08Sb_0.92/GaSb quarter-wavelength layers deposited by molecular beam epitaxy on GaSb substrate.

Keywords

III-V semiconductors; Q-switching; aluminium compounds; fibre lasers; gallium compounds; holmium; laser mirrors; laser mode locking; molecular beam epitaxial growth; optical saturable absorption; semiconductor growth; thulium; AlAs_0.08Sb_0.92-GaSb; JkJk:Tm,Ho; Q-switched fibre lasers; mode-locked fibre lasers; molecular beam epitaxy; quarter-wavelength layer deposition; semiconductor saturable absorber mirrors; wavelength 2 mum; Fiber lasers; Gas lasers; Laser mode locking; Mirrors; Optical materials; Optical pulse generation; Optical pulses; Pump lasers; Semiconductor lasers; Space vector pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5194625

Filename

5194625