Title :
Mode-locked and Q-switched 2-µm fibre lasers based on semiconductor saturable absorber technology
Author :
Guina, M. ; Kivistö, S. ; Suomalainen, S. ; Okhotnikov, O.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
Abstract :
In this paper, we review recent progress in the development of GaSb-based saturable absorber mirrors used for mode-locking and Q-switching Tm/Ho fibre lasers. The typical semiconductor mirror consists of 18.5 pairs of AlAs0.08Sb0.92/GaSb quarter-wavelength layers deposited by molecular beam epitaxy on GaSb substrate.
Keywords :
III-V semiconductors; Q-switching; aluminium compounds; fibre lasers; gallium compounds; holmium; laser mirrors; laser mode locking; molecular beam epitaxial growth; optical saturable absorption; semiconductor growth; thulium; AlAs0.08Sb0.92-GaSb; JkJk:Tm,Ho; Q-switched fibre lasers; mode-locked fibre lasers; molecular beam epitaxy; quarter-wavelength layer deposition; semiconductor saturable absorber mirrors; wavelength 2 mum; Fiber lasers; Gas lasers; Laser mode locking; Mirrors; Optical materials; Optical pulse generation; Optical pulses; Pump lasers; Semiconductor lasers; Space vector pulse width modulation;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5194625
