Title :
Advanced quantum dot based devices
Author :
Reithmaier, Johann Peter ; Pavelescu, Emil-Mihai ; Gilfert, Christian
Author_Institution :
Inst. of Nanostruct. Technol. & Analytics, Univ. of Kassel, Kassel, Germany
Abstract :
In semiconductor quantum dot structures major macroscopic electronic and optical material properties can be engineered by geometric parameters on the nanoscale domain. In this paper an overview will be given on advanced layer designs for high power quantum dot lasers. Advanced designs based on tunnel injection quantum wells allow a significant improvement of the characteristic temperature (To=200 K). In addition a strong reduction of the alpha-factor is expected, which may allow in future to overcome filamentation problems in high brightness high power lasers.
Keywords :
nanophotonics; optical design techniques; optical materials; quantum dot lasers; quantum wells; geometric parameter; high power quantum dot laser; nanoscale domain; optical material property; semiconductor quantum dot structure; tunnel injection quantum well; Brightness; Optical design; Optical materials; Power engineering and energy; Power lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Temperature;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5194651
