DocumentCode
2834856
Title
Design and optimization of high-power pulsed class-C microwave amplifiers
Author
Asensio, Alberto ; Pérez, Félix
Author_Institution
Dept. de Senales, Sistemas y Radiocomunicaciones, ETSI, Madrid, Spain
fYear
1991
fDate
11-14 Jun 1991
Firstpage
2371
Abstract
The authors present a set of CAD techniques which allow the prediction of the performance of high-power-high-frequency pulsed class-C amplifiers used in solid-state transmitters at L-S bands. Examples of these techniques are presented. The results obtained by analyzing an L -band stage amplifier with the RX1214B300Y bipolar transistor show that it can deliver more than 250 W of RF power. The results agree with experimental measurements
Keywords
bipolar transistors; circuit CAD; microwave amplifiers; optimisation; power amplifiers; radar transmitters; semiconductor device models; solid-state microwave circuits; 250 W; CAD techniques; L-band; RF power; RX1214B300Y; bipolar transistor; class-C amplifiers; experimental measurements; high power amplifiers; microwave amplifiers; optimization; performance prediction; pulsed amplifiers S-band; solid-state transmitters; Bipolar transistors; Design automation; Design optimization; High power amplifiers; Power amplifiers; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Solid state circuits; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN
0-7803-0050-5
Type
conf
DOI
10.1109/ISCAS.1991.176855
Filename
176855
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