Title :
Design and optimization of high-power pulsed class-C microwave amplifiers
Author :
Asensio, Alberto ; Pérez, Félix
Author_Institution :
Dept. de Senales, Sistemas y Radiocomunicaciones, ETSI, Madrid, Spain
Abstract :
The authors present a set of CAD techniques which allow the prediction of the performance of high-power-high-frequency pulsed class-C amplifiers used in solid-state transmitters at L-S bands. Examples of these techniques are presented. The results obtained by analyzing an L-band stage amplifier with the RX1214B300Y bipolar transistor show that it can deliver more than 250 W of RF power. The results agree with experimental measurements
Keywords :
bipolar transistors; circuit CAD; microwave amplifiers; optimisation; power amplifiers; radar transmitters; semiconductor device models; solid-state microwave circuits; 250 W; CAD techniques; L-band; RF power; RX1214B300Y; bipolar transistor; class-C amplifiers; experimental measurements; high power amplifiers; microwave amplifiers; optimization; performance prediction; pulsed amplifiers S-band; solid-state transmitters; Bipolar transistors; Design automation; Design optimization; High power amplifiers; Power amplifiers; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Solid state circuits; Transmitters;
Conference_Titel :
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN :
0-7803-0050-5
DOI :
10.1109/ISCAS.1991.176855
