DocumentCode
283501
Title
InGaAs-InP MQW electro-absorption modulators
Author
Guy, DRP ; Besgrove, D.D. ; Taylor, LL ; Apsley, N. ; Bass, SJ
Author_Institution
R. Signals & Radar Establ., Malvern, UK
fYear
1988
fDate
32443
Firstpage
42491
Lastpage
42494
Abstract
InGaAs-InP electro-absorption modulators operating around the low-loss optical fibre wavelength of 1.55 μm are demonstrated. Modulation in 70 Å and 100 Å InGaAs wells is compared. The maximum contrast ratio of 2.6:1 (4.1 dB) is obtained at 1590 nm in a 150×100 Å MQW sample
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical modulation; semiconductor quantum wells; 1.55 to 1.59 micron; 100 A; 70 A; InGaAs wells; InGaAs-InP; MQW; electro-absorption modulators; low-loss optical fibre wavelength; maximum contrast ratio; multiple-quantum wells;
fLanguage
English
Publisher
iet
Conference_Titel
Heterojunction and Quantym Well Devices: Physics, Engineering and Applications, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
209517
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