Title :
In0.53Ga0.47As-InP multiple quantum well layers disordered by impurity diffusion with sulphur or zinc and by proton bombardment
Author :
Pape, I.J. ; Li Kam Wa, P. ; Roberts, D.A. ; David, J.P.R. ; Claxton, P.A. ; Robson, P.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Abstract :
The intermixing of solid source MBE grown In0.53Ga0.47 As-InP MQW layers has been investigated by impurity diffusion induced disordering (IDID) using zinc or sulphur as impurities and by impurity implantation induced disordering (IIID) using protons as the implant. A single mode waveguide operating at 1.52 μm was fabricated by sulphur IDID
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; ion implantation; optical waveguides; semiconductor doping; semiconductor quantum wells; sulphur; zinc; 1.52 micron; In0.53Ga0.47 As-InP; MQW layers; impurity diffusion induced disordering; impurity implantation induced disordering; intermixing; multiple quantum well layers; single mode waveguide; solid source MBE;
Conference_Titel :
Heterojunction and Quantym Well Devices: Physics, Engineering and Applications, IEE Colloquium on
Conference_Location :
London
