• DocumentCode
    283503
  • Title

    In0.53Ga0.47As-InP multiple quantum well layers disordered by impurity diffusion with sulphur or zinc and by proton bombardment

  • Author

    Pape, I.J. ; Li Kam Wa, P. ; Roberts, D.A. ; David, J.P.R. ; Claxton, P.A. ; Robson, P.N.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • fYear
    1988
  • fDate
    32443
  • Firstpage
    42552
  • Lastpage
    42556
  • Abstract
    The intermixing of solid source MBE grown In0.53Ga0.47 As-InP MQW layers has been investigated by impurity diffusion induced disordering (IDID) using zinc or sulphur as impurities and by impurity implantation induced disordering (IIID) using protons as the implant. A single mode waveguide operating at 1.52 μm was fabricated by sulphur IDID
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; ion implantation; optical waveguides; semiconductor doping; semiconductor quantum wells; sulphur; zinc; 1.52 micron; In0.53Ga0.47 As-InP; MQW layers; impurity diffusion induced disordering; impurity implantation induced disordering; intermixing; multiple quantum well layers; single mode waveguide; solid source MBE;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Heterojunction and Quantym Well Devices: Physics, Engineering and Applications, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    209519
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=283503