DocumentCode
2835254
Title
Silicon integrated nanophotonics for on-chip optical interconnects
Author
Vlasov, Yurii A.
Author_Institution
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2009
fDate
14-19 June 2009
Firstpage
1
Lastpage
1
Abstract
The silicon nanophotonic devices have a strong potential to increase tremendously the 10 capacity for inter- and intra-chip connectivity up to a Terabit/sec data rates as well as lower significantly the overall IO power consumption below 1 mW per Gigabit/sec. A concept of a 3DI integrated microprocessor chip with lower layer having hundreds of processing cores, an intermediate memory layer (or multiple memory layers) and an optical interconnects layer on top of the 3D stack. The function of this photonic layer is to provide very high-bandwidth and ultra-low power conversion from electrical to optical signaling, transporting data in the form of optical pulses across the whole chip as well as off the chip, and converting optical signals back to electrical domain to deliver messages between chips or between the distant cores on the same chip.
Keywords
elemental semiconductors; integrated optoelectronics; microprocessor chips; nanophotonics; optical films; optical interconnections; silicon; 3DI integrated microprocessor chip; intermediate memory layer; nanophotonic device; on-chip optical interconnect; optical interconnects layer; silicon integrated nanophotonics; ultra-low power conversion; Energy consumption; Nanophotonics; Optical filters; Optical interconnections; Optical modulation; Optical ring resonators; Photonic integrated circuits; Silicon; Switches; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-4079-5
Electronic_ISBN
978-1-4244-4080-1
Type
conf
DOI
10.1109/CLEOE-EQEC.2009.5194713
Filename
5194713
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