Title :
A 100-element MESFET grid oscillator
Author :
Weikle, R.M., II ; Popovic, Z.B. ; Kim, Marn-Go ; Potter, K.A. ; Rutledge, D.B.
Author_Institution :
Div. of Eng. & Appl. Sci., California Inst. of Technol., Pasadena, CA, USA
Abstract :
A planar grid oscillator which combines the outputs of 100 devices quasi-optically is presented. The planar configuration is attractive because it is compatible with present-day IC fabrication techniques. In addition, the grid´s structure leads to a transmission-line model that can readily be applied to the design of larger grids in the future. This approach is particularly attractive for wafer-scale integration at millimeter wavelengths. The grid oscillates near 5 GHz and can be frequency tuned with mirror spacing from 4.8 GHz to 5.2 GHz. The far-field radiation patterns for the grid are shown. From the pattern, the directivity is calculated to be 16 dB. The ERP is measured to be 25 W. The DC input power is 3 W, and the power radiated from the grid is calculated to be 0.625 W. This gives a DC-to-RF efficiency of 20%.<>
Keywords :
MMIC; Schottky gate field effect transistors; VLSI; microwave oscillators; transmission line theory; 0.625 W; 20 percent; 25 W; 3 W; 4.8 to 5.2 GHz; DC input power; DC-to-RF efficiency; ERP; IC fabrication techniques; MESFET; SHF; directivity; far-field radiation patterns; frequency tuned; microwave oscillators; millimeter wavelengths; mirror spacing; planar grid oscillator; transmission-line model; wafer-scale integration; Fabrication; Frequency; MESFETs; Millimeter wave measurements; Millimeter wave technology; Mirrors; Oscillators; Semiconductor device modeling; Transmission lines; Wafer scale integration;
Conference_Titel :
Antennas and Propagation Society International Symposium, 1990. AP-S. Merging Technologies for the 90's. Digest.
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/APS.1990.115321
