Title :
MESFET physical model helps for reliable MMICs design
Author :
Cazaux, J.L. ; Pouysegur, M. ; Roques, D. ; Bertrand, S.
Author_Institution :
Alcatel Espace, Toulouse, France
Abstract :
The cost reduction is the major concern of companies willing to insert MMICs in large projects like phased array antennas and not necessarily experienced in the GaAs technology area. Therefore a worst case analysis (WCA) of the envisaged circuit becomes as important as the electrical design itself. A reliable WCA has to be done from process parameters´ variations rather than from uncorrelated electrical deviations which means the use of physical modeling of the elements. The model presented by the authors, FETMOD, is a very convenient MESFET simulator, easy to handle and fast to run as required for a circuit analysis. It has been used with satisfaction for a successful MMIC amplifier design and can be run on a personal computer FETMOD has been also validated by re-computing the data coming from four different GaAs foundries. Consequently such a simulator can be used to compare and have some ideas on the degree of quality of the different processes
Keywords :
MMIC; Schottky gate field effect transistors; circuit CAD; circuit analysis computing; semiconductor device models; solid-state microwave devices; CAD; FETMOD; MESFET; MMIC design; circuit analysis; monolithic microwave IC; personal computer; physical model; simulator;
Conference_Titel :
Microwave and Millimetre Wave Monolithic Integrated Circuits, IEE Colloquium on
Conference_Location :
London