DocumentCode :
283575
Title :
Novel GaAs MMIC components and multifunction circuits
Author :
Lane, A.A. ; Myers, F.A.
Author_Institution :
Plessey Res. Caswell Ltd., Allen Clark Res. Centre, UK
fYear :
1988
fDate :
32458
Firstpage :
42522
Lastpage :
42526
Abstract :
Since the demonstration of FET based MMICs in the mid 1970s these devices have started to work a revolution in the microwave industry in many ways similar to that created by Si ICs many years ago. Compared to microwave hybrids, MMICs offer small size, low weight, repeatability, reliability and in volume, low cost. However the authors consider that the present generation of GaAs MMICs have only scratched the surface of the medium capability. The large majority of MMICs use conventional microstrip design rules, albeit realised with photolithographic accuracy on the GaAs substrate. This is not utilising the potential of the monolithic medium and it is the authors´ purpose to show how novel circuit elements, combined with the proven high yield of the advanced Plessey process can lead to very much smaller MMIC chips or, perhaps more significantly for the future, truly effective multifunction circuits
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; integrated circuit manufacture; integrated circuit technology; GaAs; IC fabrication; III-V semiconductors; MMIC components; advanced Plessey process; monolithic microwave IC; multifunction circuits;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Microwave and Millimetre Wave Monolithic Integrated Circuits, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
209616
Link To Document :
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