• DocumentCode
    283575
  • Title

    Novel GaAs MMIC components and multifunction circuits

  • Author

    Lane, A.A. ; Myers, F.A.

  • Author_Institution
    Plessey Res. Caswell Ltd., Allen Clark Res. Centre, UK
  • fYear
    1988
  • fDate
    32458
  • Firstpage
    42522
  • Lastpage
    42526
  • Abstract
    Since the demonstration of FET based MMICs in the mid 1970s these devices have started to work a revolution in the microwave industry in many ways similar to that created by Si ICs many years ago. Compared to microwave hybrids, MMICs offer small size, low weight, repeatability, reliability and in volume, low cost. However the authors consider that the present generation of GaAs MMICs have only scratched the surface of the medium capability. The large majority of MMICs use conventional microstrip design rules, albeit realised with photolithographic accuracy on the GaAs substrate. This is not utilising the potential of the monolithic medium and it is the authors´ purpose to show how novel circuit elements, combined with the proven high yield of the advanced Plessey process can lead to very much smaller MMIC chips or, perhaps more significantly for the future, truly effective multifunction circuits
  • Keywords
    III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; integrated circuit manufacture; integrated circuit technology; GaAs; IC fabrication; III-V semiconductors; MMIC components; advanced Plessey process; monolithic microwave IC; multifunction circuits;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Microwave and Millimetre Wave Monolithic Integrated Circuits, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    209616