DocumentCode
283575
Title
Novel GaAs MMIC components and multifunction circuits
Author
Lane, A.A. ; Myers, F.A.
Author_Institution
Plessey Res. Caswell Ltd., Allen Clark Res. Centre, UK
fYear
1988
fDate
32458
Firstpage
42522
Lastpage
42526
Abstract
Since the demonstration of FET based MMICs in the mid 1970s these devices have started to work a revolution in the microwave industry in many ways similar to that created by Si ICs many years ago. Compared to microwave hybrids, MMICs offer small size, low weight, repeatability, reliability and in volume, low cost. However the authors consider that the present generation of GaAs MMICs have only scratched the surface of the medium capability. The large majority of MMICs use conventional microstrip design rules, albeit realised with photolithographic accuracy on the GaAs substrate. This is not utilising the potential of the monolithic medium and it is the authors´ purpose to show how novel circuit elements, combined with the proven high yield of the advanced Plessey process can lead to very much smaller MMIC chips or, perhaps more significantly for the future, truly effective multifunction circuits
Keywords
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; integrated circuit manufacture; integrated circuit technology; GaAs; IC fabrication; III-V semiconductors; MMIC components; advanced Plessey process; monolithic microwave IC; multifunction circuits;
fLanguage
English
Publisher
iet
Conference_Titel
Microwave and Millimetre Wave Monolithic Integrated Circuits, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
209616
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