• DocumentCode
    283576
  • Title

    Universities design multi-project GaAs wafers

  • Author

    Newett, S.J.

  • Author_Institution
    Div. of Electron., Rutherford-Appleton Lab., Chilton, Didcot, UK
  • fYear
    1988
  • fDate
    32458
  • Firstpage
    42552
  • Lastpage
    42555
  • Abstract
    A number of UK universities have recently completed their designs for a multi-project gallium-arsenide wafer. These have been fabricated in the UK by Plessey III/V Limited. The initiative, which was led by the Science and Engineering Research Council, was aimed at giving the universities some experience in designing monolithic microwave integrated circuits (MMICs) at low cost. The project involved seven design teams from UK universities and the Rutherford-Appleton Laboratory. Each designer was allocated a 2 mm×2 mm area within a die site. The final eight designs, plus a process monitoring drop-in, were arranged in a 3×3 array. This was then replicated all over the 2" wafer. The author discusses the chosen design vehicle-the travelling wave amplifier, the fabrication process used, simulation, layout and present programme status
  • Keywords
    III-V semiconductors; MMIC; circuit layout; gallium arsenide; integrated circuit technology; GaAs; Rutherford-Appleton Laboratory; UK universities; layout; low cost MMIC design; monolithic microwave integrated circuits; multiproject wafer design; simulation; travelling wave amplifier;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Microwave and Millimetre Wave Monolithic Integrated Circuits, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    209617