Title :
The implementation of a 144 element gate array in heterojunction bipolar transistors
Author :
Parton, J.G. ; Topham, P.J. ; Golder, M.J. ; Goodfellow, R.C.
Author_Institution :
Plessey Res. (Caswell
Abstract :
The authors detail the design, fabrication and assessment of an ECL/CML gate array using GaAlAs-GaAs HBTs. The purpose of the work was to investigate high speed, moderate complexity uncommitted logic arrays. The customisations employed include a four channel multiplexer and a divide by eight circuit. Operating speeds up to 3.1 GHz have been measured with these circuits
Keywords :
III-V semiconductors; aluminium compounds; application specific integrated circuits; bipolar integrated circuits; emitter-coupled logic; gallium arsenide; heterojunction bipolar transistors; logic arrays; 3.1 GHz; ASIC; ECL/CML gate array; GaAlAs-GaAs; HBTs; III-V semiconductors; bipolar IC; customisations; divide by eight circuit; four channel multiplexer; heterojunction bipolar transistors; high speed; moderate complexity; semicustom circuits; uncommitted logic arrays;
Conference_Titel :
Microwave and Millimetre Wave Monolithic Integrated Circuits, IEE Colloquium on
Conference_Location :
London
