• DocumentCode
    283596
  • Title

    Developments in GaAs solar cells

  • Author

    Cross, T.A.

  • Author_Institution
    Div. of Solid State Devices, EEV Ltd., Chelmsford, UK
  • fYear
    1988
  • fDate
    32462
  • Firstpage
    42370
  • Lastpage
    42374
  • Abstract
    The progress in space photovoltaics is reviewed with emphasis on GaAs based solar cells. The maximum practicable efficiency for a single junction device is probably 23-24% under AMO 1 sun illumination. There are two ways to achieve higher efficiency, namely concentrating the incident solar flux or splitting the solar spectrum by utilising multijunction cells to convert energy more effectively over a larger fraction of the solar spectrum. The prospects for the realisation of solar cells which employ these concepts to achieve efficiencies approaching 30% AMO are discussed
  • Keywords
    III-V semiconductors; gallium arsenide; solar cells; space vehicle power plants; 23 to 24 percent; 30 percent; GaAs solar cells; III-V semiconductors; development; efficiency; multijunction cells; single junction device; solar flux concentration; solar spectrum; space photovoltaics; space vehicle power plants;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Solar Cells for Space Applications, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    209640