DocumentCode
283596
Title
Developments in GaAs solar cells
Author
Cross, T.A.
Author_Institution
Div. of Solid State Devices, EEV Ltd., Chelmsford, UK
fYear
1988
fDate
32462
Firstpage
42370
Lastpage
42374
Abstract
The progress in space photovoltaics is reviewed with emphasis on GaAs based solar cells. The maximum practicable efficiency for a single junction device is probably 23-24% under AMO 1 sun illumination. There are two ways to achieve higher efficiency, namely concentrating the incident solar flux or splitting the solar spectrum by utilising multijunction cells to convert energy more effectively over a larger fraction of the solar spectrum. The prospects for the realisation of solar cells which employ these concepts to achieve efficiencies approaching 30% AMO are discussed
Keywords
III-V semiconductors; gallium arsenide; solar cells; space vehicle power plants; 23 to 24 percent; 30 percent; GaAs solar cells; III-V semiconductors; development; efficiency; multijunction cells; single junction device; solar flux concentration; solar spectrum; space photovoltaics; space vehicle power plants;
fLanguage
English
Publisher
iet
Conference_Titel
Solar Cells for Space Applications, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
209640
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