DocumentCode :
283596
Title :
Developments in GaAs solar cells
Author :
Cross, T.A.
Author_Institution :
Div. of Solid State Devices, EEV Ltd., Chelmsford, UK
fYear :
1988
fDate :
32462
Firstpage :
42370
Lastpage :
42374
Abstract :
The progress in space photovoltaics is reviewed with emphasis on GaAs based solar cells. The maximum practicable efficiency for a single junction device is probably 23-24% under AMO 1 sun illumination. There are two ways to achieve higher efficiency, namely concentrating the incident solar flux or splitting the solar spectrum by utilising multijunction cells to convert energy more effectively over a larger fraction of the solar spectrum. The prospects for the realisation of solar cells which employ these concepts to achieve efficiencies approaching 30% AMO are discussed
Keywords :
III-V semiconductors; gallium arsenide; solar cells; space vehicle power plants; 23 to 24 percent; 30 percent; GaAs solar cells; III-V semiconductors; development; efficiency; multijunction cells; single junction device; solar flux concentration; solar spectrum; space photovoltaics; space vehicle power plants;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Solar Cells for Space Applications, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
209640
Link To Document :
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