• DocumentCode
    283616
  • Title

    Interchip and WSI optical interconnect based on electro absorption modulators

  • Author

    Gracian, A.P. ; Davies, O.J. ; Midwinter, J.E.M.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
  • fYear
    1988
  • fDate
    32463
  • Firstpage
    42644
  • Lastpage
    42647
  • Abstract
    After a brief account of the implications of scaling of VLSI circuits and the possible effects of the developing superconductors for optical interconnect, the potential superiority of using electro absorption modulators compared to laser diodes or conventional electronics is demonstrated on a power vs. speed basis. Results suggest, this approach gives considerable power saving for interchip links at frequencies above 100 MHz, for modulators smaller than 100 μm. The authors then describe SPOC (Simulation Program for Optoelectronic Circuits) which is currently under development at UCL, together with its relevance to the detailed modelling of VLSI circuits with optical I/O
  • Keywords
    VLSI; electro-optical devices; electroabsorption; integrated optoelectronics; optical interconnections; optical modulation; 100 MHz; 100 micron; Simulation Program for Optoelectronic Circuits; VLSI circuits; laser diodes; optical interconnect; superconductors; wafer scale integration;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Interconnects, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    209665