DocumentCode :
283616
Title :
Interchip and WSI optical interconnect based on electro absorption modulators
Author :
Gracian, A.P. ; Davies, O.J. ; Midwinter, J.E.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fYear :
1988
fDate :
32463
Firstpage :
42644
Lastpage :
42647
Abstract :
After a brief account of the implications of scaling of VLSI circuits and the possible effects of the developing superconductors for optical interconnect, the potential superiority of using electro absorption modulators compared to laser diodes or conventional electronics is demonstrated on a power vs. speed basis. Results suggest, this approach gives considerable power saving for interchip links at frequencies above 100 MHz, for modulators smaller than 100 μm. The authors then describe SPOC (Simulation Program for Optoelectronic Circuits) which is currently under development at UCL, together with its relevance to the detailed modelling of VLSI circuits with optical I/O
Keywords :
VLSI; electro-optical devices; electroabsorption; integrated optoelectronics; optical interconnections; optical modulation; 100 MHz; 100 micron; Simulation Program for Optoelectronic Circuits; VLSI circuits; laser diodes; optical interconnect; superconductors; wafer scale integration;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Optical Interconnects, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
209665
Link To Document :
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