Title :
High breakdown voltage and high fmax InAlAs/InGaAs HEMTs on GaAs
Author :
Higuchi, K. ; Matsumoto, H. ; Mishima, T. ; Nakamura, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
A simple model to describe the dependence of both the breakdown voltage between a gate and a drain (BVgd) and maximum frequency of oscillation (fmax) on a width of the gate recess in an InAlAs/InGaAs high electron mobility transistor (HEMT) is presented. The model suggests that the wide recess structure can improve both BVgd and fmax, which is experimentally confirmed. We fabricated InAlAs/InGaAs HEMTs lattice-mismatched on GaAs substrates with optimum recess-width, and these exhibited both a high BV gd of 14 V and a high fmax of 127 GHz at a gate length of 0.66 μm
Keywords :
III-V semiconductors; aluminium compounds; avalanche breakdown; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; millimetre wave field effect transistors; semiconductor device breakdown; semiconductor device models; 127 GHz; 14 V; GaAs; InAlAs-InGaAs; InAlAs/InGaAs HEMTs on GaAs; device performance; drain conductance; gate recess width dependence; high breakdown voltage; high maximum frequency of oscillation; impact ionization; lattice-mismatched; model; wide recess structure; Breakdown voltage; Degradation; Electrodes; Frequency; Gallium arsenide; HEMTs; High power amplifiers; Indium compounds; Indium gallium arsenide; MODFETs;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712569
