DocumentCode
2836351
Title
High breakdown voltage and high fmax InAlAs/InGaAs HEMTs on GaAs
Author
Higuchi, K. ; Matsumoto, H. ; Mishima, T. ; Nakamura, T.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear
1998
fDate
11-15 May 1998
Firstpage
501
Lastpage
504
Abstract
A simple model to describe the dependence of both the breakdown voltage between a gate and a drain (BVgd) and maximum frequency of oscillation (fmax) on a width of the gate recess in an InAlAs/InGaAs high electron mobility transistor (HEMT) is presented. The model suggests that the wide recess structure can improve both BVgd and fmax, which is experimentally confirmed. We fabricated InAlAs/InGaAs HEMTs lattice-mismatched on GaAs substrates with optimum recess-width, and these exhibited both a high BV gd of 14 V and a high fmax of 127 GHz at a gate length of 0.66 μm
Keywords
III-V semiconductors; aluminium compounds; avalanche breakdown; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; millimetre wave field effect transistors; semiconductor device breakdown; semiconductor device models; 127 GHz; 14 V; GaAs; InAlAs-InGaAs; InAlAs/InGaAs HEMTs on GaAs; device performance; drain conductance; gate recess width dependence; high breakdown voltage; high maximum frequency of oscillation; impact ionization; lattice-mismatched; model; wide recess structure; Breakdown voltage; Degradation; Electrodes; Frequency; Gallium arsenide; HEMTs; High power amplifiers; Indium compounds; Indium gallium arsenide; MODFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712569
Filename
712569
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