Title :
HF characteristics of InP-based HFETs grown at extremely low temperatures of 300°C and below
Author :
Lee, L.H. ; Kunze, M. ; Henle, B. ; Kohn, E.
Author_Institution :
Dept. of Electron. Devices & Circuits, Ulm Univ., Germany
Abstract :
Heterostructure FETs with InP channel have been fully grown and processed at low temperature by MBE. Here we show that such structures are also feasible for microwave applications. InP-based HFETs with 20 nm InAlAs Schottky layer and 50 nm InP channel layer grown below 300°C were processed and characterized at DC and RF. The devices show a maximum breakdown voltage above 10 V, ft=19 GHz and fmax =40 GHz at 0.4 μm gate length. The highest ft·LG-product was 10 GHz·μm for a 1.2 μm device
Keywords :
III-V semiconductors; field effect transistors; indium compounds; microwave field effect transistors; molecular beam epitaxial growth; semiconductor growth; 0.4 mum; 1.2 mum; 10 V; 19 GHz; 20 nm; 20 nm InAlAs Schottky layer; 40 GHz; 50 nm; 50 nm InP channel layer; HF characteristics; InP; InP channel; InP-based HFETs; heterostructure FETs; maximum breakdown voltage; microwave applications; Circuits; Electron devices; HEMTs; Hafnium; Indium compounds; Indium phosphide; MODFETs; Microwave devices; Schottky barriers; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712573
