Title :
Abnormal Zn diffusion along slip dislocation of InP/InGaAs/InP PIN photodiode
Author :
Iwasaki, Takashi ; Iguchi, Yasuhiro ; Sekiguchi, Takashi
Author_Institution :
Optoelectron. R&D, Sumitomo Electr. Ind. Ltd., Osaka, Japan
Abstract :
Crystal quality and dark current characteristics for InP/InGaAs/InP PIN Photodiode along slip dislocation of sulfur-doped InP substrate have been studied. We found for the first time that Zn is abnormally diffused on the surface of PIN-PD along slip dislocations in InP(S) substrate, which means that the PIN structure in the chip is partially destroyed
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; p-i-n photodiodes; semiconductor heterojunctions; slip; surface diffusion; zinc; InP-InGaAs-InP:Zn; InP/InGaAs/InP PIN photodiode; Zn diffusion; crystal quality; dark current characteristics; slip dislocation; Absorption; Crystalline materials; Dark current; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Manufacturing processes; PIN photodiodes; Substrates; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712574
