Title :
Characterization and modeling of SOI varactors at various temperatures
Author :
Chen, Kun-Ming ; Yeh, Wen-Kuan ; Guo-Wei Huang ; Fang, Yean-Kuch ; Yang, Fu-Liang
Author_Institution :
Nat. Nano Device Lab., Hsinchu, Taiwan
Abstract :
SOI varactors have attracted attention for RF circuit applications due to the superior speed advantage of SOI technology. This paper presents the capacitance and the quality factor of MOS varactors in SOI CMOS process at various temperatures. The temperature coefficient of capacitance of inversion-mode device in larger than that of accumulation-mode devices in the normal operating range. Besides, the quality factor decreases with increasing temperature for these varactors. A device model based on BSIM3v3 model is proposed to simulate the temperature effect. The modeled results of the capacitance, series resistance and quality factor for SOI varactors have excellent agreement with the measured results.
Keywords :
CMOS integrated circuits; MIS devices; Q-factor; capacitance; elemental semiconductors; integrated circuit modelling; silicon-on-insulator; varactors; MOS varactors; RF circuit application; SOI CMOS process; SOI varactors; Si; accumulation mode device; capacitance; inversion mode device; quality factor; series resistance; temperature coefficient; CMOS process; CMOS technology; Capacitance measurement; Circuits; Electrical resistance measurement; Q factor; Radio frequency; Semiconductor device modeling; Temperature distribution; Varactors;
Conference_Titel :
Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on
Print_ISBN :
977-05-2010-1
DOI :
10.1109/ICM.2003.1287790
