Title :
The composition of phosphorus and arsenic vapor in view of thermal processing of III-V wafers
Author :
Kortus, J. ; Roth, K. ; Herms, M. ; Porezag, D.V. ; Pederson, M.R.
Author_Institution :
Inst. of Theor. Phys., Tech. Univ. Bergakademie Freiburg, Germany
Abstract :
In-situ Raman scattering results on vapor of phosphorus and arsenic at temperatures up to 1400 K are presented. The ratio of partial pressures of the dimer and the tetramer is proportional to the ratio of the corresponding Raman intensities. With respect to the quantitative comparison of the experimental Raman data with thermodynamical calculation (ChernSage) the Raman activities were determined by first principles calculations on these molecules. In particular, we comment on the presence of trimer components in these gases as conjectured in thermodynamics
Keywords :
III-V semiconductors; Raman spectra; heat treatment; semiconductor doping; semiconductor growth; 1400 K; As; As vapour; III-V wafers; P; P vapour; Raman scattering; first principles calculations; thermal processing; thermodynamics; Annealing; Atmosphere; Crystals; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Physics; Raman scattering; Temperature; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712580
