DocumentCode
2836778
Title
Photoelastic characterization of residual strain in MWA SI InP crystal wafers
Author
Fukuzawa, M. ; Herms, M. ; Uchida, M. ; Oda, O. ; Yamada, M.
Author_Institution
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
fYear
1998
fDate
11-15 May 1998
Firstpage
537
Lastpage
540
Abstract
Residual strain in semi-insulating InP wafers was characterized by using a scanning infrared polariscope (SIRP). SIRP maps of single-step and multi-step annealed wafers are compared with those of the as-grown state. In general, a fair decrease of residual strain by wafer annealing was found. The most homogeneous distribution was revealed in the wafer treated by multiple wafer annealing
Keywords
III-V semiconductors; annealing; indium compounds; photoelasticity; InP; MWA SI InP crystal wafers; homogeneous distribution; multi-step annealed wafers; multiple wafer annealing; photoelastic characterization; residual strain; scanning infrared polariscope; single-step annealed wafers; Annealing; Capacitive sensors; Indium phosphide; Information science; Materials science and technology; Photoelasticity; Photonic crystals; Residual stresses; Strain measurement; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712595
Filename
712595
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