Title :
Size-correction Technique for k•p Simulation of Silicon Quantum Dots
Author :
Gomez-Campos, F.M. ; Rodriguez-Bolivar, S. ; Carceller, J.E.
Author_Institution :
Dept. de Electron. y Tecnol. de Comput., Univ. de Granada, Granada
Abstract :
In this work we propose a correction to the effective mass approach (EMA), to be used in Si quantum dot simulations. With this technique we obtained results comparable to those calculated by the tight-binding method (TB). We used this new approach to obtain the hole spectra in spherical quantum dots by means of a fast algorithm, thus improving the accuracy of the EMA.
Keywords :
effective mass; elemental semiconductors; semiconductor quantum dots; silicon; tight-binding calculations; effective mass approach; hole spectra; k-p Simulation; silicon quantum dots; size-correction technique; tight-binding method; Atomic measurements; Computational modeling; Conferences; Effective mass; Kinetic energy; Physics computing; Quantum computing; Quantum dots; Silicon; Wave functions; Quantum dot; effective mass; k·p; silicon;
Conference_Titel :
Computational Science and Engineering Workshops, 2008. CSEWORKSHOPS '08. 11th IEEE International Conference on
Conference_Location :
San Paulo
Print_ISBN :
978-0-7695-3257-8
DOI :
10.1109/CSEW.2008.49
