Title :
Photoelastic measurement of chip-bonding induced strains by infrared polariscope
Author :
Chu, T. ; Yamada, M.
Author_Institution :
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
Abstract :
Strain induced by bonding a GaAs chip on a copper heatsink plate has been measured with a reflection type of infrared polariscope. It is found that the bonding-induced strain reaches the order of 10-4 , which corresponds to about 1/10 of that estimated from the thermal expansion difference for the unit length between GaAs and copper when it is cooled down from the die-bonding temperature to the room temperature
Keywords :
III-V semiconductors; birefringence; gallium arsenide; photoelasticity; polarimetry; strain measurement; thermal expansion; wafer bonding; Cu; GaAs; GaAs chip; chip-bonding induced strains; copper heatsink plate; die-bonding temperature; infrared polariscope; photoelastic measurement; thermal expansion; Bonding; Copper; Gallium arsenide; Infrared heating; Photoelasticity; Polarization; Reflection; Semiconductor device measurement; Strain measurement; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712597
