Title :
Valence-band parameters determined by eigenenergies in In0.53 Ga0.47As/In0.52Al0.48As multi-quantum well structures
Author :
Tanaka, K. ; Kotera, N. ; Nakamura, H.
Author_Institution :
Dept. of Comput. Sci. & Electron., Kyushu Inst. of Technol., Fukuoka, Japan
Abstract :
Various values of heavy-hole effective mass and valence-band offset in In0.53Ga0.47As/In0.52Al0.48 As multi-quantum wells have been reported to date. Determination of the parameters is important for application to opto-electronic devices. In this paper, we report the heavy-hole effective mass and the valence-band offset derived from saturation of a eigenenergy close to a top of a potential well using the envelope function model
Keywords :
III-V semiconductors; aluminium compounds; effective mass; eigenvalues and eigenfunctions; gallium arsenide; indium compounds; photoconductivity; semiconductor epitaxial layers; semiconductor quantum wells; valence bands; In0.53Ga0.47As-In0.52Al0.48 As; eigenenergies; envelope function model; heavy-hole effective mass; multi-quantum wells; valence-band offset; Absorption; Effective mass; Excitons; Indium compounds; Indium phosphide; PIN photodiodes; Photoconductivity; Potential well; Quantum well devices; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712599
