Title :
Optical properties of In0.52Al0.48As layers and In0.53Ga0.47As/In0.52Al0.48 As quantum well structures grown on (111)B InP substrates by molecular beam epitaxy
Author :
Kawamura, Y. ; Kamada, A. ; Yoshimatsu, K. ; Nakao, M. ; Inoue, N.
Author_Institution :
Res. Inst. for Adv. Sci. & Technol., Osaka Prefecture Univ., Japan
Abstract :
Optical properties were studied for In0.52Al0.48 As layers and In0.53Ga0.47As/In0.52 Al0.48As quantum well (QW) structures grown on (111)B InP substrates. It was found that the photoluminescence (PL) spectrum of the InAlAs layers grown on the(111)B InP substrates had a remarkable dependence on the V/III ratio and the growth temperature. The PL peak energy of the InGaAs/InAlAs QWs grown on the (111)B InP substrates showed a red shift compared with those grown on (100) InP substrates. An atomic force microscopy (AFM) observation revealed that the (111)B InGaAs well is thicker than the (100) InGaAs well
Keywords :
III-V semiconductors; aluminium compounds; atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; red shift; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; AFM; In0.52Al0.48As; In0.53Ga0.47As-In0.52Al0.48As; InP; InP[111]B substrates; V/III ratio; growth temperature; molecular beam epitaxy; photoluminescence; quantum well; red shift; Atomic force microscopy; Atomic layer deposition; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Substrates; Temperature dependence;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712603
