DocumentCode
2836885
Title
Optical properties of In0.52Al0.48As layers and In0.53Ga0.47As/In0.52Al0.48 As quantum well structures grown on (111)B InP substrates by molecular beam epitaxy
Author
Kawamura, Y. ; Kamada, A. ; Yoshimatsu, K. ; Nakao, M. ; Inoue, N.
Author_Institution
Res. Inst. for Adv. Sci. & Technol., Osaka Prefecture Univ., Japan
fYear
1998
fDate
11-15 May 1998
Firstpage
556
Lastpage
559
Abstract
Optical properties were studied for In0.52Al0.48 As layers and In0.53Ga0.47As/In0.52 Al0.48As quantum well (QW) structures grown on (111)B InP substrates. It was found that the photoluminescence (PL) spectrum of the InAlAs layers grown on the(111)B InP substrates had a remarkable dependence on the V/III ratio and the growth temperature. The PL peak energy of the InGaAs/InAlAs QWs grown on the (111)B InP substrates showed a red shift compared with those grown on (100) InP substrates. An atomic force microscopy (AFM) observation revealed that the (111)B InGaAs well is thicker than the (100) InGaAs well
Keywords
III-V semiconductors; aluminium compounds; atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; red shift; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; AFM; In0.52Al0.48As; In0.53Ga0.47As-In0.52Al0.48As; InP; InP[111]B substrates; V/III ratio; growth temperature; molecular beam epitaxy; photoluminescence; quantum well; red shift; Atomic force microscopy; Atomic layer deposition; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Substrates; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712603
Filename
712603
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