A CMOS 135–150 GHz 0.4 dBm EIRP transmitter with 5.1dB P1dB extension using IF envelope feed-forward gain compensation

Author

Tang, Adrian ; Murphy, David ; Hsiao, Frank ; Gu, Qun Jane ; Xu, Zhiwei ; Virbila, Gabriel ; Wang, Yen-Hsiang ; Wu, Hao ; Nan, Lan ; Wu, Yi-Cheng ; Chang, Mau-Chung Frank

Author_Institution

Univ. of California, Los Angeles, Los Angeles, CA, USA

fYear

2012

fDate

17-22 June 2012

Firstpage

1

Lastpage

3

Abstract

A CMOS D-band 135-150 GHz transmitter is presented with integrated digital control and on-chip antenna. The proposed transmitter employs an IF feed-forward compensation scheme which improves the soft gain compression of the power amplifier by 5.1dB to provide an overall more linear AM-AM profile allowing reduced power back-off for modulation schemes with a high peak-to-average ratio. The proposed D-band transmitter consumes 255mW and occupies 2000 × 1500 um of silicon area. The proposed transmitter delivers a 0.4 dBm EIRP and a saturated power on chip of 13.2 dBm. The transmitter has a peak PAE of 8.2% with power delivered to the antenna and a peak PAE of 0.4% when considering radiated power.

Keywords

CMOS integrated circuits; feedforward; millimetre wave circuits; power amplifiers; silicon; transmitters; CMOS D-band transmitter; CMOS EIRP transmitter; IF envelope feed-forward gain compensation; equivalent isotropically radiated power; frequency 135 GHz to 150 GHz; high peak-to-average ratio; integrated digital control; linear AM-AM profile; modulation scheme; on-chip antenna; power 255 mW; power amplifier; soft gain compression; Antenna measurements; CMOS integrated circuits; Gain; Power amplifiers; Power measurement; Semiconductor device measurement; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Conference_Location

Montreal, QC

ISSN

0149-645X

Print_ISBN

978-1-4673-1085-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2012.6257760

Filename

6257760