• DocumentCode
    2837354
  • Title

    Handling long-term memory effects in X-parameter model

  • Author

    Soury, Arnaud ; Ngoya, Edouard

  • Author_Institution
    Agilent Technologies - EEsof Division - Massy, France
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Since the last decade, the behavioral modeling of RF functional blocks (amplifiers, mixers, (de)modulators, etc.) has been a flourishing research domain that has led to a better overall understanding of the nonlinear dynamics impact to the circuit performances. Recently the X-parameter paradigm has been introduced. The formalism provides a comprehensive description of the relationships between all the harmonics of the scattered and incident power waves at the ports of a device, and represents a major advancement in RF circuit characterization. The formalism however still needs effective handling of the long term memory effects. In this paper, a simple and efficient approach is proposed to model long-term memory effects within X-parameter. It ensures both a simple extraction procedure and an efficient numerical implementation.
  • Keywords
    Computational modeling; Harmonic analysis; Integrated circuit modeling; Mathematical model; Pulse measurements; Radio frequency; Solid modeling; X-parameter; long term memory model; pulsed envelope measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6257768
  • Filename
    6257768