DocumentCode
2837354
Title
Handling long-term memory effects in X-parameter model
Author
Soury, Arnaud ; Ngoya, Edouard
Author_Institution
Agilent Technologies - EEsof Division - Massy, France
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
Since the last decade, the behavioral modeling of RF functional blocks (amplifiers, mixers, (de)modulators, etc.) has been a flourishing research domain that has led to a better overall understanding of the nonlinear dynamics impact to the circuit performances. Recently the X-parameter paradigm has been introduced. The formalism provides a comprehensive description of the relationships between all the harmonics of the scattered and incident power waves at the ports of a device, and represents a major advancement in RF circuit characterization. The formalism however still needs effective handling of the long term memory effects. In this paper, a simple and efficient approach is proposed to model long-term memory effects within X-parameter. It ensures both a simple extraction procedure and an efficient numerical implementation.
Keywords
Computational modeling; Harmonic analysis; Integrated circuit modeling; Mathematical model; Pulse measurements; Radio frequency; Solid modeling; X-parameter; long term memory model; pulsed envelope measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6257768
Filename
6257768
Link To Document