Title :
Radiation hardness studies in a CCD with high-speed column parallel readout
Author :
Sopczak, André ; Aoulmit, Salim ; Bekhouche, Khaled ; Bowdery, Chris ; Buttar, Craig ; Damerell, Chris ; Davies, Gavin ; Djjendaoui, Dahmane ; Dehimi, Lakhdar ; Greenshaw, Tim ; Koziel, Michal ; Maneuski, D. ; Stefanov, Konstantin ; Tikkanen, Tuomo ; Wool
Author_Institution :
Lancaster Univ., Lancaster
fDate :
Oct. 26 2007-Nov. 3 2007
Abstract :
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying shortlived particles. The Linear Collider Flavour Identification (LCFI) collaboration is developing Column-Parallel CCDs (CPCCDs) for the vertex detector of the International Linear Collider (ILC). The CPCCDs can be read out many times faster than standard CCDs, significantly increasing their operating speed. The results of detailed simulations of the charge transfer inefficiency (CTI) of a prototype CPCCD are reported and studies of the influence of gate voltage on the CTI described. The effects of bulk radiation damage on the CTI of a CPCCD are studied by simulating the effects of two electron trap levels, 0.17 and 0.44 eV, at different concentrations and operating temperatures. The dependence of the CTI on different occupancy levels (percentage of hit pixels) and readout frequencies is also studied. The optimal operating temperature for the CPCCD, where the effects of the charge trapping are at a minimum, is found to be about 230 K for the range of readout speeds proposed for the ILC. The results of the full simulation have been compared with a simple analytic model.
Keywords :
charge-coupled devices; electron traps; position sensitive particle detectors; radiation effects; readout electronics; semiconductor counters; Column-Parallel CCDs; International Linear Collider; Linear Collider Flavour Identification; bulk radiation damage; charge transfer inefficiency; charge trapping; electron trap levels; electron volt energy 0.17 eV to 0.44 eV; gate voltage; high energy physics experiments; high-speed column parallel readout; radiation hardness; readout frequencies; spatial resolution; thin sensitive layers; vertex detector; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Detectors; Electron traps; International collaboration; Spatial resolution; Temperature; Virtual prototyping; Voltage;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-0922-8
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2007.4436600