DocumentCode :
2838761
Title :
Highly uniform regrown In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes on In0.53Ga0.47As
Author :
Osaka, Jiro ; Maczawa, K. ; Yokoyama, Haruki ; Yamamoto, Masafumi
Author_Institution :
NTT Syst. Electron. Labs., Atsugi, Japan
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
568
Lastpage :
570
Abstract :
We studied molecular beam epitaxial (MBE) regrowth of In0.53 Ga0.47As on InGaAs and obtained highly uniform regrown resonant tunneling diodes (RTDs) on HEMTs grown by metalorganic chemical vapor deposition (MOCVD) with the peak current standard deviation over a 2" wafer as low as 3%
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; resonant tunnelling diodes; semiconductor epitaxial layers; semiconductor growth; In0.53Ga0.47As; In0.53Ga0.47As-AlAs-InAs; MBE regrowth; highly uniform diodes; monolithic integration; peak current standard deviation; resonant tunneling diodes; Annealing; Diodes; HEMTs; Indium gallium arsenide; MODFETs; Molecular beam epitaxial growth; Resonant tunneling devices; Rough surfaces; Surface roughness; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712654
Filename :
712654
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2838761
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