• DocumentCode
    2838761
  • Title

    Highly uniform regrown In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes on In0.53Ga0.47As

  • Author

    Osaka, Jiro ; Maczawa, K. ; Yokoyama, Haruki ; Yamamoto, Masafumi

  • Author_Institution
    NTT Syst. Electron. Labs., Atsugi, Japan
  • fYear
    1998
  • fDate
    11-15 May 1998
  • Firstpage
    568
  • Lastpage
    570
  • Abstract
    We studied molecular beam epitaxial (MBE) regrowth of In0.53 Ga0.47As on InGaAs and obtained highly uniform regrown resonant tunneling diodes (RTDs) on HEMTs grown by metalorganic chemical vapor deposition (MOCVD) with the peak current standard deviation over a 2" wafer as low as 3%
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; resonant tunnelling diodes; semiconductor epitaxial layers; semiconductor growth; In0.53Ga0.47As; In0.53Ga0.47As-AlAs-InAs; MBE regrowth; highly uniform diodes; monolithic integration; peak current standard deviation; resonant tunneling diodes; Annealing; Diodes; HEMTs; Indium gallium arsenide; MODFETs; Molecular beam epitaxial growth; Resonant tunneling devices; Rough surfaces; Surface roughness; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1998 International Conference on
  • Conference_Location
    Tsukuba
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-4220-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1998.712654
  • Filename
    712654
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2838761