DocumentCode :
2838877
Title :
An operational amplifier for high performance pipelined ADCs in 65nm CMOS
Author :
Payami, Saifullah ; Ojani, Amin
Author_Institution :
Dept. of Electr. Eng., Linkoping Univ., Linkoping, Sweden
fYear :
2012
fDate :
12-13 Nov. 2012
Firstpage :
1
Lastpage :
4
Abstract :
A CMOS fully differential high gain-bandwidth (GBW) product operational amplifier (OpAmp) is presented in this paper. In order to achieve a high gain, the Nested gain-boosting technique [1] is employed. The design is implemented in a 1.1V standard 65nm CMOS process. The DC-gain of the OpAmp is larger than 77.9dB with the unity-gain frequency of 4.61GHz while achieving 76.2 degrees of phase margin (PM). Applying the maximum input swing, the output signal settles to 0.01% accuracy in less than 3.8ns. The output total harmonic distortion (THD) of the OpAmp is 0.586% for maximum signal swing at the frequencies near Nyquist frequency with the input-referred noise of 5.4nV/√Hz. The high GBW product of this design makes it suitable for 12-bit 200MS/s pipelined ADC applications.
Keywords :
CMOS integrated circuits; analogue-digital conversion; field effect MMIC; operational amplifiers; CMOS; DC gain; Nyquist frequency; frequency 4.61 GHz; fully differential operational amplifier; high gain bandwidth product operational amplifier; high performance pipelined ADC; nested gain boosting technique; output total harmonic distortion; phase margin; size 65 nm; voltage 1.1 V; Boosting; CMOS integrated circuits; CMOS technology; Capacitors; Impedance; MOS devices; Noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
NORCHIP, 2012
Conference_Location :
Cpenhagen
Print_ISBN :
978-1-4673-2221-8
Electronic_ISBN :
978-1-4673-2222-5
Type :
conf
DOI :
10.1109/NORCHP.2012.6403114
Filename :
6403114
Link To Document :
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