Wideband Reconfigurable Capacitive shunt-feedback LNA in 65nm CMOS

Author

ud Din, Imad ; Wernehag, Johan ; Andersson, Sean ; Mattisson, Sven

Author_Institution

Ericsson Res., Lund, Sweden

fYear

2012

fDate

12-13 Nov. 2012

Firstpage

1

Lastpage

4

Abstract

A differential LNA using capacitive shunt feedback is demonstrated in 65nm CMOS. The capacitive shunt feedback structure gives a wideband input matching, S11 <;-17 dB from 500MHz - 1 GHz for low band and S11 <;-20 dB from 1.1 GHz - 2.3GHz for high band. The NF for the complete receiver chain in low band and high band was measured to 3.3 dB and 3.9 dB, respectively. The 1-dB compression point with a 0dBm blocker present at 20MHz offset is 0dBm and the NF_dsb with 0dBm blocker is 13 dB. In-band IIP3, and IIP2 are -14.8 dBm, and >;49 dBm, respectively for low band and -18.2dBm and >;44dBm for high band.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; differential amplifiers; feedback amplifiers; low noise amplifiers; wideband amplifiers; CMOS process; capacitive shunt feedback structure; differential LNA; frequency 1.1 GHz to 2.3 GHz; frequency 500 MHz to 1 GHz; low noise amplifiers; noise figure 13 dB; noise figure 3.3 dB; noise figure 3.9 dB; receiver chain; size 65 nm; wideband reconfigurable capacitive shunt-feedback LNA; CMOS integrated circuits; CMOS technology; GSM; Logic gates; Multiaccess communication; Spread spectrum communication;

fLanguage

English

Publisher

ieee

Conference_Titel

NORCHIP, 2012

Conference_Location

Cpenhagen

Print_ISBN

978-1-4673-2221-8

Electronic_ISBN

978-1-4673-2222-5

Type

conf

DOI

10.1109/NORCHP.2012.6403126

Filename

6403126